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研究了Ni/Pt和Ti/Pt金属在n型4H-SiC上的欧姆接触。在1 020℃退火后,Ni/Pt与n型4H-SiC欧姆接触的比接触电阻为2.2×10-6Ω·cm2。Ti/Pt与n型4H-SiC欧姆接触的比接触电阻为5.4×10-6Ω·cm2,退火温度为1 050℃。虽然Ni的功函数比Ti的功函数高,但是Ni比Ti更容易与n型4H-SiC形成欧姆接触。使用能谱分析仪(EDX)分析了Ni/Pt和Ti/Pt金属与4HSiC接触面的元素,观察到C原子相对于Pt原子的原子数分数随退火温度的变化而不同。实验验证了在n型4H-SiC中退火导致的碳空位起施主作用是有利于欧姆接触形成的主要原因。
The ohmic contact of Ni / Pt and Ti / Pt metals on n-type 4H-SiC was investigated. After annealing at 1 020 ℃, the specific resistance of Ni / Pt to n-type 4H-SiC ohmic contact was 2.2 × 10-6Ω · cm2. The specific contact resistance of Ti / Pt and n-type 4H-SiC ohmic contact was 5.4 × 10 -6 Ω · cm 2, and the annealing temperature was 1050 ° C. Although the work function of Ni is higher than the work function of Ti, Ni forms ohmic contact with n-type 4H-SiC more easily than Ti. The elements of Ni / Pt and Ti / Pt metal interfaces with 4HSiC were analyzed by EDX. The atomic numbers of C atoms relative to Pt atoms were observed to vary with the annealing temperature. The main reason for the formation of ohmic contacts is verified by experimentally confirming that donor carbon vacancies caused by annealing in n-type 4H-SiC are favorable for the formation of ohmic contacts.