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为改善碳纳米管场效应晶体管的性能,将一种峰值掺杂-低掺杂漏(HALO-LDD)掺杂结构引入碳纳米管沟道.在量子力学非平衡Green函数理论框架内,通过自洽求解Poisson方程和Schr(o|¨)dinger方程,构建了适用于非均匀掺杂的碳纳米管场效应管的输运模型,该模型可实现场效应晶体管的输运性质与碳纳米管手性指数的对接.利用该模型研究了单HALO双LDD掺杂结构对碳纳米管场效应晶体管输运特性的影响.对比分析表明,这种非均匀掺杂结构的场效应管同本征碳纳米管沟道场效应晶体管相比,具有更低的泄漏电流、更大的电流开关比、更小的亚阈区栅电压摆幅,表明其具有更好的栅控能力;具有更小的漏源电导,更适合应用于模拟集成电路中;具有更小的阈值电压漂移,表明更能抑制短沟道效应.同本征沟道碳纳米管场效应晶体管相比,这种非均匀掺杂碳纳米管场效应晶体管在沟道区靠近源端位置,电场强度增大,有利于增大电子的传输速率;在沟道区靠近漏端位置,电场强度减小,更有利于抑制热电子效应.
In order to improve the performance of carbon nanotube field-effect transistor (HFET), a doping peak-doped-low doping (HALO-LDD) structure was introduced into the channel of carbon nanotubes.In the framework of quantum mechanical unbalanced Green’s function theory, The solution of Poisson equation and Schr (o | ¨) dinger equation is discussed, and a transport model suitable for heterogeneous doping of carbon nanotube field effect transistor is constructed. The transport model of the field effect transistor and carbon nanotube transistor The index of the docking is obtained.The effect of the single HALO double LDD doping structure on the transport properties of the carbon nanotube field effect transistor is studied by using this model.Comparison analysis shows that the field effect transistor of this heterogeneous doping structure is the same as the intrinsic carbon nano The lower leakage current, the larger current switching ratio, the smaller sub-threshold gate-to-gate voltage swing compared to the trench MOSFETs indicates better gate control capability, the smaller drain-source conductance , Is more suitable for use in analog integrated circuits; has a smaller threshold voltage drift, indicating that more short-channel effect can be suppressed.Compared with the intrinsic channel carbon nanotube field effect transistor, this non-uniformly doped carbon nanotubes The field effect transistor is in the channel region Proximal end position, the electric field intensity is increased, in favor of increasing the transmission rate of electrons; end position near the drain in the channel region, the electric field strength is reduced, more favorable to suppress hot electron effects.