本论文针对CMOS射频集成电路设计中的sub-nH片上平面螺旋电感,提出了一种新的电感物理模型。基于片上电感的高频物理特性分析,新模型采用П型拓扑结构和RLC元件来描述sub-nH量级片上螺旋电感的集总参数特性。本论文将器件之间的互连线并入电感模型,提高了电感模型的实用性,简化了电路设计和仿真。测试结果表明,新模型在低频到40GHz的频率范围内获得了较高的精度。最后,本论文利用电感新模型设计了一个中心频率为20GHz,噪声系数为4.8dB的低噪声放大器。 In this paper, a novel inductive physical model is proposed for the sub-nH planar spiral inductor in CMOS RFIC design. Based on the analysis of high-frequency physical characteristics of on-chip inductors, the new model uses П topology and RLC elements to describe the lumped parameter characteristics of sub-nH on-chip spiral inductors. In this thesis, the interconnection lines between devices are integrated into the inductor model, which improves the practicality of the inductor model and simplifies the circuit design and simulation. The test results show that the new model achieves higher accuracy in the frequency range from low frequency to 40GHz. Finally, a new low-noise amplifier with a center frequency of 20GHz and a noise figure of 4.8dB is designed in this paper.