本文采用多孔氧化硅全隔离技术获得了硅膜厚度小于１００ｎｍ、硅岛宽度大于１００μｍ的超薄ＳＯＩ（ＴＦＳＯＩ）结构．用透视电子显微镜剖面分析技术（ＸＴＥＭ）、扩展电阻分析（ＳＲＰ）、喇曼光谱、台阶轮廓仪和击穿电压测量等技术对多孔氧化硅超薄ＳＯＩ结构进行了分析，结果表明其顶层硅膜单晶性好，硅膜和埋层氧化层界面平整．实验表明硅岛的台阶形貌及应力状况取决于阳极化反应条件．在硅膜厚约为８０ｎｍ的ＴＦＳＯＩ材料上制备了ｐ沟ＭＯＳＦＥＴ，输出特性良好． In this paper, a porous SOI (TFSOI) structure with a silicon film thickness of less than 100 nm and a silicon island width of more than 100 μm is obtained by a porous silicon oxide full isolation technology. The ultrathin porous SOI structure was analyzed by X-ray microscopy (SEM), extended resistance analysis (SRP), Raman spectroscopy, step profiler and breakdown voltage measurement. The results show that the top layer silicon film Good single crystal, silicon film and buried oxide layer interface formation. Experiments show that the island’s topography and stress conditions depend on the anodizing reaction conditions. The p-channel MOSFET is fabricated on a TFSOI material with a silicon film thickness of about 80 nm and has good output characteristics.