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作者设计并建立了用于SiH_4—H_2系统的新型内热式电阻加热外延炉。该装置最大优点是比其它类型的装置在制备外延片时消耗的电能少数倍。本文研究了利用该装置制备高性能外延层的条件以及一些动力学因素的影响。
The author designed and built a new type of electric heating epitaxial furnace for SiH_4-H_2 system. The greatest advantage of this device is that it consumes several times less energy than other types of devices in the fabrication of epitaxial wafers. This paper studies the conditions for the preparation of high-performance epitaxial layers using this device and the effects of some kinetic factors.