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本文介绍了用非平行非对称(+、-)双晶X射线形貌术研究Ⅲ—Ⅴ族化合物外延晶体的设置和原理。分析了外延后形成的弯曲样品造成的衍射效应。对分子束外延(MBE)法生长的GaAs/AlGaAs衬底和外延层分别进行了X射线形貌术观察。讨论了外延层中存在的失配位错、生长小丘、沾污和局部微差取向等缺陷。对位错的组态和来源进行了初步分析。本实验结果也表明,有应变超晶格过渡层的MBE法对生长优质的GaAs/AlGaAs外延片是有利的。
In this paper, the non-parallel asymmetric (+, -) dual-crystal X-ray topography is used to study the settings and principles of III-V compound epitaxial crystals. The diffraction effect caused by the curved sample formed after epitaxy was analyzed. X-ray topography observation of GaAs / AlGaAs substrates and epitaxial layers grown by molecular beam epitaxy (MBE) was performed. The mismatch dislocations, growth hillocks, stains and local misorientations in the epitaxial layer are discussed. The dislocation of the configuration and source of a preliminary analysis. The experimental results also show that the MBE method with strained superlattice transition layer is advantageous for the growth of high quality GaAs / AlGaAs epitaxial wafers.