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利用射频反应磁控溅射技术制备了氮化铝(AlNx)薄膜。采用X射线衍射仪、扫描电子显微镜、紫外-可见-近红外分光光度计分析氮氩比对AlNx相结构、表面形貌、沉积速率以及薄膜光谱透过率的影响规律。氮氩比显著影响溅射薄膜的成分和相组成,进而影响薄膜的透过率。当氮氩比小于4/156时,薄膜由金属铝组成;当氮氩比大于6/154时,薄膜由立方-AlN相组成。薄膜形貌随氮氩比例增大由粗糙不规则状的颗粒转化为均匀致密的细小颗粒,AlNx薄膜的沉积速率随之减小。光学性能测试结果表明,AlNx薄膜透过率由金属铝膜的零增加为83%,AlNx薄膜在300～2500nm波长范围内透过率较高,而在大于2500nm的近红外区透过率显著下降。
Aluminum nitride (AlNx) films were prepared by RF reactive magnetron sputtering. The influence of nitrogen and argon ratio on the phase structure, surface morphology, deposition rate and spectral transmittance of AlNx was analyzed by X-ray diffraction, scanning electron microscopy and UV-Vis-NIR spectrophotometer. The ratio of nitrogen to argon significantly affects the composition and phase composition of the sputtered film, which in turn affects the film’s transmission. When the ratio of nitrogen to argon is less than 4/156, the film is composed of aluminum; when the ratio of nitrogen to argon is greater than 6/154, the film consists of cubic -AlN phase. With the increase of the ratio of nitrogen to argon, the morphology of the films changed from coarse irregular grains to fine and uniform grains. The deposition rate of AlNx thin films decreased accordingly. The results of optical tests show that the transmittance of AlNx thin film is increased from zero for aluminum film to 83%. The transmittance of AlNx thin film is higher in the wavelength range from 300 nm to 2500 nm. The transmittance of AlNx thin film in the near infrared region .