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成熟的CMOS技术可制备无源光学器件,但高效光源和高性能光探测仍需要III~V族半导体材料。综述了近期III~V族外延片与SOI(silicon-on-insulator)波导集成的键合技术,按键合材料的不同分为无机和有机材料键合。着重分析了各种InGaAs/InP光电探测器与SOI波导集成的光耦合方案,并对其优缺点进行对比。同时给出设计的一种倏逝波耦合的InGaAs/InP光电探测器,用时域有限差分(FDTD)法对器件光学特性进行了模拟,以SOI上有机键合的方式,获得95%的探测器吸收效率,表明该SOI波导集成的光电探测器可实现小体积、低损耗及高响应度的光探测,符合片上光互连系统的要求。
Mature CMOS technology can produce passive optics, but high-efficiency light sources and high-performance light detection still require III-V semiconductor materials. In this paper, the bonding technologies of recent III-V epitaxial wafers and silicon-on-insulator (SOI) waveguides are reviewed. The bonding materials are divided into inorganic and organic materials. Focus on the analysis of a variety of InGaAs / InP photodetector integrated with the SOI waveguide optical coupling scheme, and its advantages and disadvantages are compared. At the same time, an evanescent wave-coupled InGaAs / InP photodetector is designed. The optical properties of the devices are simulated by finite-difference time-domain (FDTD) method and 95% detectors are obtained by organic bonding on SOI The absorption efficiency indicates that the SOI waveguide integrated photodetector can detect light with small volume, low loss and high responsivity, meeting the requirements of the on-chip interconnection system.