Phosphorene has a very high hole mobility and can be a tuned band structure,and has become an ideal material for electronic devices.For this new type of two-dimensional material,in the applied strain,black phosphorus(BP) can be changed into an indirect band gap and metallic materials from the direct band gap semiconductor material,which greatly affect its inherent physical characteristics.How to identify strained micro structure changes becomes an important problem.The calculated Raman spectra disclose that the A_g~2 mode and B_(2g) mode will split and the Raman spectra appear,while the A_g~1 mode is shifted to low-frequency region.The deformation induced by strain will effectively change the Raman mode position and intensity,this can be used to identify phosphorus changes. Phosphorene has a very high hole mobility and can be a tuned band structure, and has become an ideal material for electronic devices. For this new type of two-dimensional material, in the applied strain, black phosphorus (BP) can be changed into an indirect band gap and metallic materials from the direct band gap semiconductor material, which greatly affects its inherent physical characteristics. How to identify strained micro structure changes becomes an important problem. The calculated Raman spectra disclose that the A_g ~ 2 mode and B_ (2g) mode will split and the Raman spectra appear, while the A_g ~ 1 mode is shifted to the low-frequency region. The deformation induced by strain will change the Raman mode position and intensity, this can be used to identify the phosphorus changes.