磁控离子腐蚀(MIE)在干法腐蚀工艺中显示出特殊的优点。MIE避免了其他干法腐蚀方法所固有的许多折衷和兼顾的办法。它在低压(约5毫(?))下操作,并且提供快腐蚀速率(对SiO_2腐蚀超过6000(?)/分,对各向异性硅腐蚀超过15000(?)/分,对多晶腐蚀超过25000(?)/分)。此外,使离子朝片子加速的板极电压比其他技术约低50％以上,可导致器件更低的辐射损伤。 Magnetron ion etching (MIE) shows special advantages in the dry etching process. MIE avoids many of the tradeoffs and balances inherent in other dry etching methods. It operates at low pressure (about 5 milliliters) and provides fast corrosion rates (over 6000 (?) / Min for SiO 2, more than 15000 (?) / Min for anisotropic silicon, 25000 (?) / Min). In addition, plate voltages that accelerate ions toward the wafer are about 50% lower than other techniques, resulting in lower radiation damage to the device.