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已为直径达到6毫米的冷却的本征锗光电二极管研制出的正反馈电路,其噪声等效功率(NEP)(1.42,500,1)可达10~(-14)瓦·赫~(-1/2)或更好些。这些电路用硅光电二极管和试验电容器,在室温下作了试验;证明这些电路用一种电容传感器当作主要电路元件来使用的假设是有道理的。电路无反馈时,半功率频率有2—3赫,带宽增大因数常常大于400,而不减低原来的噪声等效功率。这种技术也适用于低频。
The positive feedback circuit, which has been developed for cooled intrinsic germanium photodiodes up to 6 mm in diameter, has a noise equivalent power (NEP) (1.42,500,1) of up to 10 ~ (-14) W · Hz ~ (- 1/2) or better. These circuits were tested at room temperature with silicon photodiodes and test capacitors; the assumption that these circuits were used with a capacitive sensor as the main circuit element makes sense. Circuit without feedback, the half-power frequency of 2-3 Hz, the bandwidth is often greater than the factor of 400, without reducing the original noise equivalent power. This technique is also suitable for low frequencies.