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四、MSSBIRCCID焦平面阵列的典型结构固体图象传感器的基本结构是约于七十年代前半期确立的,主要依靠超大规模集成电路技术的发展,使其实用化。可是,为实现小型化、高分辨率,若按以往的方式欲缩小象元尺寸是非常困难的,因此,目前有必要重新研究其基本结构。以往的固体图象传感器的主要工作模式是行间转移(Interline Transfer——IT)CCD和MOS方式。在IT—CCD和MOS技术的基础上,1985年日本报导了480×400元CSD图象传感器。下面简要介绍CSD的结构、工作原理、特点及具有CSD结构的MSSBIRCCID焦平面阵列的典型结构。
4. Typical Structure of MSSBIRCCID Focal Plane Array The basic structure of the solid-state image sensor was established around the first half of the seventies and mainly relied on the development of very large scale integrated circuit technology to make it practical. However, in order to achieve miniaturization and high resolution, it is very difficult to reduce the pixel size in the conventional manner. Therefore, it is necessary to re-study the basic structure. The main working mode of the past solid state image sensor is the Interline Transfer (IT) CCD and the MOS method. Based on IT-CCD and MOS technology, Japan reported a 480 × 400 CSD image sensor in 1985. The following is a brief introduction of the structure, working principle and characteristics of a CSD and the typical structure of an MSSBIRCCID focal plane array with a CSD structure.