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制备了稀土磷化物(LnP,Ln=La、Nd、Sm和Y),研究了其光学、电学和光电性质。这些化合物的电阻率很低,接近半导体电阻率下限。霍尔系数测定和热探针的实验表明,化合物为n-型载流子导电材料,载流子浓度很高,电阻温度系数为负值。计算了化合物的活化能和费米能级的位置。化合物的禁带宽度为1.4～1.0电子伏特。在光照下,SmP和YP在p型单晶硅上的镀膜具有光生伏特效应。提出了稀土磷化物的能带图,并解释了其光学和电学性质。
The rare earth phosphides (LnP, Ln = La, Nd, Sm and Y) were prepared and their optical, electrical and optoelectronic properties were studied. The resistivity of these compounds is very low, close to the lower limit of the semiconductor resistivity. Hall coefficient determination and thermal probe experiments show that the compound is an n-type carrier conducting material with a high carrier concentration and a negative temperature coefficient of resistance. The activation energy of the compound and the position of the Fermi level were calculated. The forbidden band width of the compound is 1.4-1.0 electron volts. The coating of SmP and YP on p-type single crystal silicon has the photovoltaic effect under illumination. The band diagram of rare earth phosphide is presented and its optical and electrical properties are explained.