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考虑光场限制因子、温度变化和阱间载流子非均匀分布,给出AlGaInAs多量子阱增益求解的分析模型。对量子阱应变量、阱宽和载流子浓度对材料增益TE模和TM模的影响进行了分析。设计出C波段内增益低偏振相关的混合应变多量子阱结构。在15~45℃温度范围,其模式增益具有低的偏振相关性(2%以内);当注入载流子浓度从2×10~(24) m~(-3)增大到3×10~(24) m~(-3)时,模式增益逐渐增大,且能在一定温度下保持低的偏振相关(3%以内)。
Considering the limitation of the optical field, the temperature variation and the nonuniform distribution of carriers in the well, an analytical model for solving the gain of the AlGaInAs multiple quantum well is given. The effects of quantum well strain, well width and carrier concentration on TE mode and TM mode are analyzed. A mixed multiple strain multiple quantum well structure with low polarization and low polarization in C band is designed. The mode gain has a low polarization dependence (within 2%) at a temperature in the range of 15-45 ° C. When the injected carrier concentration increases from 2 × 10 ~ (24) m ~ (-3) to 3 × 10 ~ (24) m ~ (-3), the mode gain gradually increases, and can maintain low polarization correlation (within 3%) at a certain temperature.