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用射频磁控溅射法制备了Ta2O5高介电薄膜,并对其进行了退火处理。用C-V,(G/ω)-V和I-V方法研究了Al/Ta2O5/p-Si结构的电学特性,观测到了C-V和(G/ω)-V的频散效应。认为串联电阻、Si/Ta2O5界面的界面态密度、边缘俘获是频散效应的主要原因,提取了界面态密度和边缘俘获电荷的大小。同时也研究了不同的退火温度对这些参数以及漏电流的影响,经600℃退火后,样品的电容最大,俘获电荷密度和漏电流最小,器件的电学性能最佳。
Ta2O5 high dielectric films were prepared by RF magnetron sputtering and annealed. The electrical properties of Al / Ta2O5 / p-Si structures were investigated by C-V, (G / ω) -V and I-V methods and the dispersion effects of C-V and (G / ω) -V were observed. It is considered that the series resistance, the interface state density and the edge trapping at the Si / Ta2O5 interface are the main reasons for the dispersion effect, and the interface state density and the edge trapping charge are extracted. At the same time, the effects of different annealing temperature on these parameters and the leakage current were also studied. After annealing at 600 ℃, the capacitance of the sample was the highest, the charge trapping density and leakage current were the smallest, and the electrical properties of the device were the best.