论文部分内容阅读
测量了掺铒硅的高分辨光致发光光谱，得到９条铒发光分裂谱线．利用群对称理论指出９条谱线来自Ｅｒ３＋中４Ｉ１３／２到４Ｉ１５／２光跃迁在Ｔｄ晶场下的分裂．Ｅｒ３＋的第一激发态４Ｉ１３／２最低能量的两个Ｓｔａｒｋ能级为Γ８，Γ６（能量递增），它们到基态４Ｉ１５／２相应晶场Ｓｔａｒｋ能级的允许辐射跃迁为９条谱线．硅∶铒，氧样品发光强度增加，但光谱结构与硅∶铒样品相同，表明氧杂质所产生的配位场叠加在硅晶场上，增强了Ｔｄ晶场强度，但并没有改变铒发光中心的晶场对称性．
The high resolution photoluminescence spectrum of erbium-doped silicon was measured and nine erbium-emitting spectral lines were obtained. The theory of group symmetry is used to point out that the nine lines come from the splitting of 4I13 / 2 to 4I15 / 2 light transitions in Er3 + at Td crystal field. Er3 + first excited state 4I13 / 2 minimum energy of the two Stark energy levels Γ8, Γ6 (energy increment), their ground state 4I15 / 2 Stark level corresponding crystal field allows radiation transition to 9 lines. Silicon: Erbium, oxygen sample luminous intensity increased, but the spectral structure and silicon: erbium sample the same, indicating that oxygen impurity generated by the coordination field superimposed on the silicon crystal field, enhanced Td crystal field strength, but did not change the erbium luminescent center The crystal field symmetry.