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抛光磨料在抛光衬底和抛光垫间做磨削运动,它是CMP工艺的重要组成部分,是决定抛光速率和平坦化能力的重要影响因素。因此分析磨料的各物性参数对CMP过程的影响尤为重要。随着晶圆表面加工尺寸的进一步精密化,磨料黏度作为抛光磨料重要物性参数之一,受到越来越多的重视。根据实验结果从微观角度研究了磨料黏度对CMP抛光速率的影响及机理,并由此得出当抛光液磨料黏度为1.5 mPa.s时,抛光速率可达到458 nm/min且抛光表面粗糙度为0.353 nm的良好表面状态。
Polishing Abrasives Grinding between the polishing substrate and the polishing pad is an important part of the CMP process and is an important factor in determining the polishing rate and planarization capability. Therefore, the analysis of the physical properties of abrasive CMP process is particularly important. With the further processing of wafer surface precision, abrasive viscosity as one of the important physical parameters of polishing abrasive, by more and more attention. According to the experimental results, the influence of the abrasive viscosity on the CMP polishing rate and the mechanism were investigated microscopically. The results showed that the polishing rate can reach 458 nm / min and the polishing surface roughness is Good surface condition of 0.353 nm.