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采用热丝辅助射频等离子体增强化学气相沉积 (CVD)方法直接在Si(10 0 )衬底上制备了多晶C3N4 薄膜。X射线衍射 (XRD)测试表明薄膜同时含有α C3N4 和 β C3N4 晶相以及未知结构。傅立叶变换红外吸收谱 (FTIR)表明薄膜内的C—N ,CN和CN键的吸收峰分别位于 12 37,16 2 5和2 191cm- 1。利用扫描电子显微镜 (SEM)观测到线度约为 2 μm、横截面为六边形的 β C3N4 晶粒。纳米压痕法测得薄膜的硬度最高可达 72 .6 6GPa。
Polycrystalline C3N4 thin films were directly deposited on Si (100) substrates by hot wire assisted RF plasma enhanced chemical vapor deposition (CVD). X-ray diffraction (XRD) tests showed that the film contains both α C3N4 and β C3N4 phases as well as unknown structure. Fourier transform infrared spectroscopy (FTIR) showed that the absorption peaks of C-N, CN and CN bonds in the films were at 12 37,16 2 5 and 2 191cm-1, respectively. The β C3N4 grains with a hexagonal cross section of about 2 μm were observed by scanning electron microscopy (SEM). Nano-indentation measured the hardness of the film up to 72.66GPa.