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介绍了一个基于0.35μm SiGe BiCMOS的整数N频率综合器.通过采用不同工艺来实现不同模块,实现了一个具有良好的杂散和相噪性能的高纯度频率综合器.除环路滤波器外所有的部件均采用差分电路结构.为了进一步减小相位噪声,压控振荡器中采用绑定线来形成谐振.该频率综合器可在2.39~2.72GHz的频率范围内输出功率0dBm.在100kHz频偏处测得的相位噪声为-95dBc/Hz,在1MHz频偏处测得的相位噪声为-116dBc/Hz.参考频率处杂散小于-72dBc.在3V的工作电压下,包括输出驱动级在内的整个芯片消耗60mA电流.
An integer N frequency synthesizer based on 0.35μm SiGe BiCMOS is introduced. By using different processes to implement different modules, a high-purity frequency synthesizer with good spurious and phase noise performance is realized. All except the loop filter Components are used differential circuit structure.In order to further reduce the phase noise, voltage-controlled oscillator using binding line to form a resonance.The frequency synthesizer in the frequency range of 2.39 ~ 2.72GHz output power 0dBm at 100kHz frequency offset The measured phase noise is -95dBc / Hz and the phase noise measured at 1MHz offset is -116dBc / Hz. The spurious at the reference frequency is less than -72dBc. At the operating voltage of 3V, including the output driver stage The entire chip consumes 60mA of current.