论文部分内容阅读
一、引言 GaAs作为超高速晶体管、超高速LSI和光电子学器件用的材料已崭露头角。静电感应晶体管(SIT)是一种能以最高速工作的晶体管,在其第一篇正式论文中,作者曾经指出,在流经晶体管的电流中,有受扩散速度限制的电流和热电子发射电流,如果采用将器件微细化的方法,将电子渡越的距离缩短到小于其平均自由程时,那末电子就会不受碰撞地到达漏极。这就是理想型SIT(ISIT)。据作者计算,砷化镓的f_(max)等于718GHz,后来美国
I. INTRODUCTION GaAs has emerged as a material for ultra-high speed transistors, ultra-high-speed LSIs and optoelectronic devices. In its first official paper, the authors pointed out that there is a current limited by the rate of diffusion and a thermionic emission current in the current flowing through the transistor, If you use the method of device miniaturization, the electronic transit distance is shortened to less than its mean free path, then the electron will reach the drain without impact. This is the ideal SIT (ISIT). According to the calculations of the authors, the f_ (max) of gallium arsenide is equal to 718 GHz and later to the United States