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提出了一种描述静电感应晶闸管在阻断态时的工作机理的SIT-BJT等效模型.在器件物理的基础上,分析得到的这个模型衔接了静电感应晶闸管的物理参数和结构参数,而且给出的数值分析和理论分析证明了这个模型的正确性.在该模型的基础上,讨论了势垒、阳极结的电势降落和电流的放大因子等电参数的变化.
A SIT-BJT equivalent model describing the operating mechanism of the electrostatic induction thyristor in the off-state is proposed. Based on the device physics, the model is analyzed to link the physical and structural parameters of the electrostatic induction thyristor. Numerical analysis and theoretical analysis prove the correctness of the model. Based on the model, the change of the electrical parameters such as the potential barrier of the potential barrier and the current amplification factor are discussed.