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采用蒸镀法在Si(001)基片上制备晶粒尺寸35 nm,RMS表面粗糙度优于11 nm的Be薄膜。蒸发温度由1 050℃升高至1 150℃时,Be薄膜表面形态由细小等轴晶(1 050～1 070℃)→纤维晶(1 080～1 110℃)→粗大等轴晶(1 120～1 130℃)→粗大纤维晶(1 150℃),其表面粗糙度先增加后略微下降。XRD分析结果表明:不同蒸发温度下沉积Be薄膜均主要由hcp结构的(αBe)相组成,其表面显露晶面随温度增加由(002)向(100)晶面转变。Be原子沉积速率随温度增加呈现指数函数关系增大。实验结果显示:采用水冷Si基片并控制原子沉积速率在2.3 nm/min,能够制备出单相(αBe)纳米晶薄膜。
Be films with grain size of 35 nm and RMS surface roughness of better than 11 nm were prepared on Si (001) substrate by evaporation method. When the evaporation temperature is increased from 1 050 ℃ to 1 150 ℃, the surface morphology of Be thin film consists of fine equiaxed grains (1 050 ~ 1 070 ℃) → fibrous crystals (1 080 ~ 1 110 ℃) → coarse equiaxed grains ~ 1 130 ℃) → coarse fiber crystal (1 150 ℃), the surface roughness increases first and then decreases slightly. XRD results show that the deposited Be thin films mainly consist of (αBe) phase of hcp structure at different evaporation temperatures, and the surface exposed crystal planes change from (002) to (100) crystal planes with increasing temperature. Be atomic deposition rate increases exponentially with increasing temperature. The experimental results show that single-phase (αBe) nanocrystalline thin films can be prepared by using water-cooled Si substrate and controlling the atomic deposition rate at 2.3 nm / min.