本文用光学方法对注磷InSb进行了研究,所采用的实验技术包括:(1)光子能量低于能带间隙的光吸收;(2)电反射光谱。用于实验测量的InSb晶体用切克劳斯基方法生长,所有样品为N型,纯度较高,晶向为〈111〉。它们经过研磨、机械抛光和化学机械抛光,最后经过化学腐蚀,获得高质量的光学表面。注磷的能量为200keV,剂量为10~(12)～10~(14)cm~(-2),InSb的温度为室温。光吸收和电 In this paper, Phosphorus InSb was studied by optical method. The experimental techniques used include: (1) photon energy absorption below the band gap; (2) electrical reflection spectrum. The InSb crystals used for the experimental measurements were grown using the Czochralski method. All samples were N-type, with high purity and <111> orientation. They are ground, mechanically polished and chemically polished, and finally chemically etched to obtain high quality optical surfaces. The energy of phosphorus injection is 200keV and the dose is 10 ~ (12) ~ 10 ~ (14) cm ~ (-2). The temperature of InSb is room temperature. Light absorption and electricity