论文部分内容阅读
利用俄歇电子能谱研究了Cr／SiO2薄膜在热处理过程中的界面扩散反应机理、界面反应动力学过程及界面反应产物。研究结果表明，Cr／SiO2体系的界面还原反应主要是Cr与SiO2的反应，其还原反应产物是CrSix和Cr2O3物种。界面还原反应的速度与反应时间的平方根成正比，其界面还原反应过程受Cr向SiO2层的扩散过程所控制，界面还原反应的表观活化能为72．5kJ／mol（约0．75eV）。
The mechanism of interfacial diffusion reaction, interfacial reaction kinetics and interfacial reaction products of Cr / SiO2 films during heat treatment were studied by Auger electron spectroscopy. The results show that the interfacial reduction reaction of Cr / SiO2 system is mainly the reaction of Cr and SiO2, and the reduction reaction products are CrSix and Cr2O3 species. The rate of reduction reaction was proportional to the square root of the reaction time. The reduction reaction was controlled by the diffusion process of Cr into SiO2 layer. The apparent activation energy of the interface reduction reaction was 72.5kJ / mol (about 0.75eV).