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本文采用金属有机化合物气相沉积(MOCVD)方法生长了掺Sb_2O_5的SnO_2薄膜(1000~2000A)测定了薄膜的结构及其光电化学特性。
In this paper, the structure and the photoelectrochemical properties of the thin films have been measured by the growth of Sb 2 O 5 doped SnO 2 films (1000 ~ 2000 A) by the metal organic compound vapor deposition (MOCVD) method.