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在70年“国际”电子器件会议上,美帝贝尔电话实验室宣称,已研制成一种在6千兆赫下连续输出功率为2.94瓦的砷化镓碰撞雪崩(IMPATT)二极管。新型的砷化镓二极管的连续输出功率比装置在金刚石散热片上的硅器件的连续输出功率来得大。它是装置在铜螺柱上。
At the 70th International Electronics Symposium, the Telebooth Telephone Laboratory asserted that it had developed a gallium arsenide avalanche (IMPATT) diode with a continuous output of 2.94 watts at 6 GHz. The continuous output power of the new gallium arsenide diodes is greater than the continuous output power of silicon devices mounted on diamond heat sinks. It is mounted on a copper stud.