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本文给出了ＨＬ－１托卡马克在通常欧姆放电和偏压诱发Ｈ模放电条件下，脉冲注入杂质气体的实验结果以及对杂质在通常欧姆等离子体和偏压诱发Ｈ模等离子体中的输运研究结果。实验结果表明，在ＨＬ－１上偏压诱发Ｈ模等离子体中对杂质的约束性能明显优于在通常欧姆等离子体中对杂质的约束性能。杂质输运的数值模拟结果说明，无论在通常欧姆等离子体中，还是在偏压诱发Ｈ模等离子体中，杂质的输运系数都比新经典理论预计的要大得多，输运是反常的。在偏压诱发的Ｈ模等离子体中引入杂质输运“位阱”概念，能够对杂质离子约束时间长的实验现象进行很好的描述。合理地解释了在偏压杂质注入实验中杂质辐射上升时间长、衰减慢的现象。
In this paper, we present the experimental results of pulsed implantation of impurity gases by HL-1 tokamak under typical ohmic discharge and bias-induced H-mode discharges, as well as the experimental results of impurity transport in typical ohmic plasma and bias-induced H-mode plasmas Transport findings. The experimental results show that the confinement performance of impurity in H-mode plasma induced by bias voltage on HL-1 is obviously better than that of the conventional ohmic plasma. The results of numerical simulation of impurity transport show that the transport coefficients of impurities are much larger than those predicted by neoclassical theory both in normal ohmic plasma and in bias-induced H-mode plasma, and the transport is abnormal . The introduction of the concept of impurity transport “bit well” into bias-induced H-mode plasma can well describe the experimental phenomena of long confinement of impurity ions. It is reasonable to explain the long rise time and slow attenuation of impurity radiation in the experiment of bias impurity implantation.