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通过在共面波导上周期性地加载分布电容,外加驱动电压改变电容值,实现分布式MEMS移相器。首先给出了5位分布式MEMS移相器的总体结构图,分析了理论参数的设计方法。再采用HFSS建立单个微桥的三维电磁仿真模型,利用仿真得到的S参数拟合微桥的up态和down态电容值并与理论设计电容值对比,确定MEMS桥精确的结构参数。最后采用ADS建立分布式MEMS移相器整体的微波等效电路,仿真得出移相器的性能指标参数。仿真结果表明移相器在35GHz时移相精度小于0.6°,移相器的插入损耗小于0.3dB,回波损耗大于25dB。
The distributed MEMS phase shifter is realized by periodically loading the distributed capacitance on the coplanar waveguide and applying the driving voltage to change the capacitance value. Firstly, the overall structure of 5-bit distributed MEMS phase shifter is given, and the design method of theoretical parameters is analyzed. HFSS was used to establish a three-dimensional electromagnetic simulation model of a single micro-bridge. The simulated S- parameters were used to fit the up-state and down-state capacitance of the micro-bridge and compare with the theoretical design capacitance to determine the exact structural parameters of MEMS bridge. Finally, ADS is used to establish the microwave equivalent circuit of the distributed MEMS phase shifter. Simulation results show the performance parameters of the phase shifter. Simulation results show that the phase shifter has a phase shift accuracy of less than 0.6 ° at 35 GHz, a phase shifter insertion loss of less than 0.3 dB and a return loss of more than 25 dB.