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通过对低速沉积的栅极绝缘层(GL层)和低速沉积的有源层(AL层)的薄膜沉积条件进行了优化,分析了沉积AL层的功率,间距等条件的变更对薄膜的沉积速率和均匀性的影响,解释这些工艺条件对I on的影响的本质,确定最佳的沉积AL层的沉积条件;调整了GL层的功率和NH3流量,分析了两者对I on的影响规律并分析了内在的原因。通过对比优化前后的薄膜晶体管(TFT)特性曲线发现,I on提升了32%,开关比(I on/I off)提升了约40%,达到了优化TFT特性的目的。
By optimizing the deposition conditions of the low-speed gate insulating layer (GL layer) and the low-speed active layer (AL layer), the influence of the change of the deposition, such as the power and pitch of the deposited AL layer, on the deposition rate And homogeneity, explain the nature of the influence of these process conditions on I on, and determine the optimum deposition conditions for the deposited Al layer; adjust the power and NH3 flux of the GL layer, and analyze the law of the two on I on and Analysis of the internal reasons. By comparing the characteristics of the thin film transistor (TFT) before and after optimization, it was found that I on increased by 32% and the on-off ratio (I on / I off) increased by about 40%, achieving the purpose of optimizing TFT characteristics.