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一、引言 目前国内不少单位,在制作大规模集成电路光刻掩模版时,都采用国外的高解象力干版,以直接精缩的办法,为生产线上提供光刻版。这样做,虽然在光刻版的几何图形完整率上得到了有效的保证,但是,高解象力干版感光层不能经受在接触式曝光中的摩擦,它的使用寿命受到很大的限制。在具体应用中,仅通过四次以下的接触式曝光,掩模版面的几何图形便出现损坏,随着光刻次数不断增加,版面的几何图形损坏率激增。同时,由于采用精缩方法直接制作掩模版,生产效率很低,不能很好地满足生产线光刻的需要。
I. INTRODUCTION At present, quite a few domestic units adopt the high-resolution imagery of foreign countries in the production of large-scale lithography reticle of integrated circuits, and use the method of direct refinement to provide photolithography for the production line. While this is an effective guarantee of the geometrical integrity of the lithographic plate, the high-resolution dry-plate photosensitive layer can not withstand the friction in contact exposure and its useful life is greatly limited. In specific applications, the geometry of the mask mask is damaged by only four exposure exposures, and as the number of lithography increases, the geometry damage rate of the mask surges. At the same time, due to the retreating method to directly produce a reticle, the production efficiency is very low, which can not well meet the needs of lithography in the production line.