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采用拉曼光谱、光学显微镜、透射电镜研究了不同衬底温度、腔体气压对射频磁控溅射法制备的不含氢硅薄膜相结构和形貌的影响。结果表明430℃时薄膜中出现微晶相,平均晶粒尺寸2.8nm。腔体内杂质及衬底表面的显微缺陷会诱发薄膜针孔、凹坑等缺陷的产生。低温、高压会导致薄膜中空洞缺陷的密集。
Raman spectroscopy, optical microscopy and transmission electron microscopy were used to investigate the effect of substrate temperature and cavity pressure on the phase structure and morphology of the hydrogen-free silicon films prepared by RF magnetron sputtering. The results show that the film appears at 430 ℃ microcrystalline phase, the average grain size of 2.8nm. Impurities in the cavity and the substrate surface of the micro-defects will induce thin-film pinholes, pits and other defects. Low temperature, high pressure will lead to the film in the dense void defects.