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由于高的电子迁移率和二维电子气浓度,InP基赝配高电子迁移率晶体管(PHEMTs)器件成为制作太赫兹器件最有前途的三端器件之一。为提高器件的工作频率,采用InAs复合沟道,使得二维电子气的电子迁移率达到13 000 cm~2/(V·s)。成功研制出70 nm栅长的InP基赝配高电子迁移率晶体管,器件采用双指,总栅宽为30μm,源漏间距为2μm。为降低器件的寄生电容,设计T型栅的栅根高度达到210 nm。器件的最大漏端电流为1 440 mA/mm(V_(GS)=0.4 V),最大峰值跨导为2 230 mS/mm。截止频率fT和最大振荡频率f_(max)分别为280 GHz和640 GHz。这些性能显示该器件适于毫米波和太赫兹波应用。
Due to the high electron mobility and the two-dimensional electron gas concentration, InP-based pseudomorphic high electron mobility transistor (PHEMTs) devices have become one of the most promising three-terminal devices for terahertz devices. In order to increase the working frequency of the device, the InAs recombination channel is adopted to make the electron mobility of two-dimensional electron gas reach 13 000 cm 2 / (V · s). The InP-based pseudomorphic high electron mobility transistor with 70 nm gate length has been successfully developed. The device has two fingers, a total gate width of 30 μm and a source-drain spacing of 2 μm. In order to reduce the parasitic capacitance of the device, the gate height of the T-shaped gate is designed to be 210 nm. The maximum drain-end current of the device is 1 440 mA / mm (V GS = 0.4 V) and the maximum peak transconductance is 2 230 mS / mm. The cut-off frequency fT and the maximum oscillation frequency f max are 280 GHz and 640 GHz, respectively. These properties show that the device is suitable for millimeter and terahertz applications.