United Monolithic Semiconductor 公司已研制成双频倍频器单片电路,可用于从军事到商业通信系统。芯片背部有 RF 和 DC 接地,简化封装工艺,电路采用(PHEMT)制作,栅长为0.25μm,小孔通过衬底,空气桥和电子束栅光刻工艺来制作。其特性是:宽带性能(8～11.5 GHz);在+12dBm 输入功率下,输出功率为15 dBm;Id=60 mA 时,DC偏压 Vd=3.5V。 United Monolithic Semiconductor has developed a dual frequency multiplier monolithic circuit that can be used from military to commercial communications systems. RF and DC grounding on the back of the chip simplifies the packaging process, the circuit is made of (PHEMT), the gate length of 0.25μm, the hole through the substrate, the air bridge and electron beam lithography process to produce. Its features are: Broadband performance (8 to 11.5 GHz); output power of 15 dBm at +12 dBm input power; Vd = 3.5 V at Id = 60 mA.