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采用华润上华微电子公司0.6μmCMOS工艺设计了低功耗神经功能电激励集成电路.该电路适用于以卡肤电极作为激励电极的可植入式神经信号桥接系统,可以用来激励脊椎动物的脊髓神经或其他神经束.电路包括输入级差分预放大电路、增益级放大电路和输出电路.为满足体内植入式神经功能电激励的要求,该集成电路避免使用任何片外元件,实现了单片集成.根据神经信号的特点,神经功能激励电路的频率响应带宽设计为1Hz~400kHz,输出电阻为90Ω时的增益为66dB,可以在3~5V的工作电压下正常工作.采用满摆幅输出级提高了有效的激励电压输出.测试结果表明,电路的带宽和增益符合设计要求,直流功耗低于6mW,达到了设计目标.
A low-power neuro-functional electro-stimulation IC was designed by CSMC 0.6μm CMOS technology.The circuit is suitable for implantable neuron signal bridging system with card-skin electrode as the excitation electrode and can be used to stimulate vertebrate Spinal nerves or other nerve bundles.The circuit includes an input stage differential preamplifier circuit, a gain stage amplifier circuit and an output circuit, so as to meet the requirements of the in vivo implanted neural function electrical stimulation, the integrated circuit avoids using any off-chip components and achieves a single According to the characteristics of the neural signal, the frequency response bandwidth of the neural function excitation circuit is designed to be 1Hz ~ 400kHz, and the output gain is 66dB when the output resistance is 90Ω, which can work normally under the operating voltage of 3 ~ 5V. Level to improve the effective excitation voltage output.The test results show that the circuit bandwidth and gain meet the design requirements, DC power consumption is less than 6mW, to achieve the design goals.