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采用改进的热丝化学气相沉积(AHFCVD)装置,在四类六种不同性质衬底材料(W、Mo、Cu、Si、SiO_2、Al_2O_3)上研究了金刚石膜成核与生长特性。研究了基片材料特性(如材料的结晶特性、晶格常数、热膨胀系数、化学性质等)、沉积条件及基片预处理对金刚石膜成核与生长特性的影响。实验结果表明,在六种不同性质的材料上都能生长多晶金刚石膜,与是否形成碳化物中间层无关。反应气压、衬底温度和CH_4/H_2比例对其形貌、质量、成核密度的影响趋势是一致的,但也有它们各自的特点。对提高金刚石膜的质量及膜与基片的结合强度提出了一些改进措施。
The nucleation and growth characteristics of diamond films were investigated on four types of six different substrates (W, Mo, Cu, Si, SiO_2, Al_2O_3) by an improved hot filament chemical vapor deposition (AHFCVD) The effects of substrate material properties (such as the crystalline properties, lattice constants, thermal expansion coefficients, chemical properties, etc.) of the substrate, deposition conditions and substrate pretreatment on the nucleation and growth characteristics of diamond films were investigated. Experimental results show that polycrystalline diamond films can grow on six different materials regardless of the formation of carbide interlayers. The influence of reaction pressure, substrate temperature and CH 4 / H 2 ratio on the morphology, mass and nucleation density are consistent, but also have their own characteristics. To improve the quality of diamond films and the bonding strength of the substrate and the film put forward some improvements.