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[期刊论文] 作者：Alexander A. Shklyaev,Konstant,
来源：表面工程材料与先进技术期刊(英文) 年份：2013
The epitaxial growth of Ge on Si(111) covered with the 0.3 nm thick SiO2 film is studied by scanning tunneling microscopy. Nanoareas of bare Si in the SiO2 film...
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