搜索筛选:
搜索耗时0.0913秒,为你在为你在102,285,761篇论文里面共找到 12 篇相符的论文内容
发布年度:
[期刊论文] 作者：Amit Chaudhry,,
来源：Journal of Semiconductors 年份：2013
In this paper,a review of Cu/low-k,carbon nanotube(CNT),graphene nanoribbon(GNR)and optical based interconnect technologies has been done,Interconnect models,ch...
Mathematical modeling of nanoscale MOS capacitance in the presence of depletion and energy quantizat
[期刊论文] 作者：Amit Chaudhry,J.N.Roy,,
来源：半导体学报 年份：2010
A model has been developed to study the effect of depletion and energy quantization at the poly-silicon /oxide interface on the behavior of a nanometer scale n-...
[期刊论文] 作者：Amit Chaudhry,J.N.Roy,S.Sangwan,,
来源：半导体学报 年份：2011
This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain.Phonon scattering,columbic scattering and surf...
[期刊论文] 作者：Amit Chaudhry,Jatindra Nath Ro,
来源：电子科技学刊：英文版 年份：2011
An analytical model has been developed to study inversion layer quantization in the ultra thin oxide MOS (metal oxide semiconductor) structures using variation...
[期刊论文] 作者：Amit Chaudhry,Jatinder Nath Ro,
来源：电子科技学刊 年份：2004
Sub-10-nm bulk n-MOSFET (metal-oxide -semiconductor field effect transistor) direct source-to- drain tunneling current density using Wentzel- Krammers-Brillouin...
[期刊论文] 作者：Amit Chaudhry,Jatindra Nath Ro,
来源：微纳电子技术 年份：2011
研发了一种通过MOSFET的超薄栅氧化物分析直接隧穿电流密度的模型.采用Wentzel-Kramers-Brilliouin(WKB)近似计算了隧穿概率,利用清晰的表面势方程改进模型的准确性.在研究模...
[期刊论文] 作者：Amit Chaudhry,J. N. Roy,,
来源：Journal of Electronic Science and Technology 年份：2010
一个简单分析模型被开发了学习量在金者底层 MOSFET (金属氧化物半导体领域效果晶体管)的机械效果( QME )，它在减少通道的高绝缘的经常的材料也有 studied.By 与数字地报导的...
[期刊论文] 作者：Amit Chaudhry,Jatinder Nath Ro,
来源：电子科技学刊：英文版 年份：2010
Sub-10-nm 体积 n-MOSFET (金属氧化物半导体地效果晶体管) 直接 source-to- 排水管通道水流密度使用 Wentzel- Krammers-Brillouin (WKB ) 传播通道理论被模仿了。隧道长度...
[期刊论文] 作者：Amit Chaudhry,J.N.Roy,Garima Joshi,,
来源：半导体学报 年份：2010
An attempt has been made to give a detailed review of strained silicon technology.Various device models have been studied that consider the effect of strain on...
[期刊论文] 作者：Amit Chaudhry,Jatindra Nath Roy,,
来源：Journal of Electronic Science and Technology 年份：2011
An analytical model has been developed to study inversion layer quantization in the ultra thin oxide MOS (metal oxide semiconductor) structures using variation...
[期刊论文] 作者：Amit Chaudhry,Jatindra Nath Roy,,
来源：微纳电子技术 年份：2011
研发了一种通过MOSFET的超薄栅氧化物分析直接隧穿电流密度的模型。采用Wentzel-Kramers-Brilliouin(WKB)近似计算了隧穿概率,利用清晰的表面势方程改进模型的准确性。在研究...
[期刊论文] 作者：Amit Chaudhry,J. N. Roy,S. San,
来源：半导体学报：英文版 年份：2011
This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain.Phonon scattering,columbic scattering and...
相关搜索：
