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,The Microwave Characteristics of an In0.4Ga0.6As Metal-Oxide-Semiconductor Field-Effect Transistor
[期刊论文] 作者：LIU Gui-Ming,CHANG Hu-Dong,SUN Bing,LIU Hong-Gang, 来源：中国物理快报（英文版） 年份：2013
A high microwave performance enhancement-mode (E-mode) In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a Si-doped In0.49Ga0...
,The Impact of HC1 Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Se
[期刊论文] 作者：XUE Bai-Qing,CHANG Hu-Dong,SUN Bing,WANG Sheng-Kai,LIU Hong-Gang, 来源：中国物理快报（英文版） 年份：2012
Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al2O3/Ge metal-oxide-semiconductor capaci...
,High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy
[期刊论文] 作者：SUN Bing,CHANG Hu-Dong,LU Li,LIU Hong-Gang,WU De-Xin, 来源：中国物理快报（英文版） 年份：2012
...
,A High Performance In0.7Ga0.aAs MOSFET with an InP Barrier Layer for Radio-Frequency Application
[期刊论文] 作者：CHANG Hu-Dong,LIU Gui-Ming,SUN Bing,ZHAO Wei,WANG Wen-Xin,LIU Hong-Gang, 来源：中国物理快报（英文版） 年份：2013
We demonstrate a high performance implant-free n-type In0.7Ga0.3As channel MOSFET with a 4-nm InP barrier layer fabricated on a semi-insulating substrate employ...
,High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation
[期刊论文] 作者：Xue Bai-Qing,Wang Sheng-Kai,Han Le,Chang Hu-Dong,Sun Bing,Zhao Wei,Liu Hong-Gang, 来源：中国物理B（英文版） 年份：2013
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,Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFET
[期刊论文] 作者：Chang Hu-Dong,Sun Bing,Xue Bai-Qing,Liu Gui-Ming,Zhao Wei,Wang Sheng-Kai,Liu Hong-Gang, 来源：中国物理B（英文版） 年份：2013
...
,Solid Phase Reactions of Ni-GaAs Alloys for High Mobility Ⅲ-Ⅴ MOSFET Applications
[期刊论文] 作者：LU Li,CHANG Hu-Dong,SUN Bing,WANG Hong,XUE Bai-Qing,ZHAO We,LIU Hong-Gang, 来源：中国物理快报（英文版） 年份：2012
The solid phase reactions of Ni with GaAs substrates are investigated.The experimental results reveal that the Ni-GaAs solid phase reaction forms a teary phase...
,GaSb p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ni/Pt/Au Source/Drain Ohmic
[期刊论文] 作者：WU Li-Shu,SUN Bin,CHANG Hu-Dong,ZHAO Wei,XUE Bai-Qing,ZHANG Xiong,LIU Hong-Gang, 来源：中国物理快报（英文版） 年份：2012
GaSb is an attractive candidate for future high-performance Ⅲ-Ⅴ p-channel metal-oxide-semiconductor-fieldeffect-transistors (pMOSFETs) because of its high hol...
,Extrinsic Base Surface Passivation in High SpeedType-Ⅱ GaAsSb/InP DHBTs Using an InGaAsP Ledge Stru
[期刊论文] 作者：LIU Hong-Gang,JIN Zhi,SU Yong-Bo,WANG Xian-Tai,CHANG Hu-Dong,ZHOU Lei,LIU Xin-Yu,WU De-Xin, 来源：中国物理快报（英文版） 年份：2010
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