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,Activation of Hydrogen-Passivated Mg in GaN-Based Light Emitting Diode Annealing with Minority-Carr
[期刊论文] 作者：YANG Ling,HAO Yue,LI Pei-Xian,ZHOU Xiao-Wei,
来源：中国物理快报(英文版) 年份：2009
We discuss an issue on the activation of p-GaN material under different annealing conditions and study the mechanism for the p-GaN activation. Under annealing i...
,Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostruc
[期刊论文] 作者：Gao Zhi-Yuan,Hao Yue,Zhang Jin-Cheng,Li Pei-Xian,Gu Wen-Ping,
来源：中国物理B（英文版） 年份：2009
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[期刊论文] 作者：Xu Da-Qing,Zhang Yi-Men,Zhang Yu-Ming,Li Pei-Xian,Wang Chao,
来源：中国物理B（英文版） 年份：2009
This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions...
,Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transisto
[期刊论文] 作者：Fan Long,Hao Yue,Zhao Yuan-Fu,Zhang Jin-Cheng,Gao Zhi-Yuan,Li Pei-xian,
来源：中国物理B（英文版） 年份：2009
Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures,...
[期刊论文] 作者：Xu Da-Qing,Zhang Yi-Men,Zhang Yu-Ming,Li Pei-Xian,Wang Chao,Lu Hong-Liang,Tang Xiao-Yan,Wang Yue-Hu,
来源：中国物理B(英文版) 年份：2008
This paper reports that (Ga, Mn)N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed us...
[期刊论文] 作者：Xu Sheng-Rui,Hao Yue,Zhang Jin-Cheng,XueXiao-Yong,Li Pei-Xian,Li Jian-Ting,Lin Zhi-Yu,Liu Zi-Yang,Ma,
来源：中国物理B（英文版） 年份：2011
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