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[期刊论文] 作者:S.Fahad,M.Ali,S.Ahmed,S.Khan,S.Alam,S.Akhtar, 来源:中国物理快报(英文版) 年份:2017
Development of graphene field effect transistors (GFETs) faces a serious challenge of graphene interface to the dielectric material.A single layer of intrinsic...
[期刊论文] 作者:S.Fahad,M.Ali,S.Ahmed,S.Khan,S.Alam,S.Akhtar,, 来源:Chinese Physics Letters 年份:2017
Development of graphene field effect transistors(GFETs) faces a serious challenge of graphene interface to the dielectric material. A single layer of intrinsic...
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