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[期刊论文] 作者：ZHANG Chao,SONG Zhi-Tang,WU Guan-Ping,LIU Bo,WANG Lian-Hong,XU Jia,LIU Yan,WANG Lei,YANG Zuo-Ya,FENG,
来源：中国物理快报（英文版） 年份：2012
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,Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Fie
[期刊论文] 作者：XU Cheng,LIU Bo,CHEN Yi-Feng,LIANG Shuang,SONG Zhi-Tang,FENG Song-Lin,WAN Xu-Dong,YANG Zuo-Ya,XIE Joseph,
来源：中国物理快报（英文版） 年份：2008
A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0.18...
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