In this paper, Ag11In12Te26Sb51 phase change semiconductor films have been prepared by dc sputtering. The crystallizatio......

研究了结晶度对Ag11In12Te26Sb51相变薄膜光学常数的影响.用初始化仪使相变薄膜晶化,改变晶化参量得到不同的结晶度,当转速固定时,......

采用初始化仪使非晶Ag11In12Te26Sb51薄膜结晶,利用差分扫描量热仪、X射线衍射和光学透过率的测量研究了非晶Ag11In12Te26Sb51薄膜......