Multi-wafer相关论文
Multi-wafer heteroepitaxial growth of 3C-SiC layers on Si(lll) substrates were performed by employing a novel home-made ......
10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor for the Fabrication of Unipolar P
Wide-band gap 4H-SiC has been attracted much attention for high-power and high-temperature electronic devices due to its......
