PFCVAD相关论文
采用磁过滤阴极脉冲真空弧沉积(pulsed filtered cathodic vacuum arc deposition,PFCVAD)系统,以Si(100)单晶片为衬底,在衬底温度......
采用磁过滤阴极脉冲真空弧沉积技术(pulsed filtered cathodic vacuum arc deposition,PFCVAD),以Si(100)单晶片为衬底,在衬底温度......
采用磁过滤阴极脉冲真空弧沉积（pulsed filtered cathodic vacuum arc deposition,PFCVAD）系统,以Si（100）单晶片为衬底,在衬底温度300......
