optoelectroni相关论文
Silicon(Si)has widely been used as an essential material in the modern semiconductor industry.Recently,new attempts have......
By utilizing Schottky contact in device fabrication,we have constructed fast response ultraviolet photodetectors based o......
Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chem
The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots(QDs) as dislocation filters......
Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferre......
Hg<sub>1-x</sub>Cd<sub>x</sub>Te（CMT）epilayers with corresponding wavelength of 10.6μm（x=0.2）were reproduciblygrown on GaAs......
利用化学气相沉积方法制备了石墨烯薄膜,并研究了其光电特性。以乙醇做反应原料、氩气作为携载气体,在873 K、973 K、1 073 K的温......
简单介绍了国内光电系统现状,阐述了光电系统的顶层规划和总体设计的主要任务,从项目管理和总体设计两个方面简述了顶层规划和总体......
关注世博会各国展馆的建筑表皮材料,从历史的纵向比较上海世博与往届世博外表皮材料的创新性及多样性,在横向上从自然材料和高科技......
