【摘 要】
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High performance LW HgCdTe IRFPAs on ZnCdTe were demonstrated by many published papers.Compared with the results on alternative substrates,the crystal quality advantages of HgCdTe on ZnCdTe have been
【机 构】
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Key lab of advanced materials and devices,Shanghai institute of Technical Physics,CAS,China 500＃ Rd.
【出 处】
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The 13th International Conference on Mid-Infrared Optoelectr
论文部分内容阅读
High performance LW HgCdTe IRFPAs on ZnCdTe were demonstrated by many published papers.Compared with the results on alternative substrates,the crystal quality advantages of HgCdTe on ZnCdTe have been indicated in LW device fabrications.Recent progress on HgCdTe/ZnCdTe by MBE was reported.The improvement of crystal quality and surface morphology on Hgl-xCdxTe/ZnCdTe(x=0.21-0.23)were studied,which were evaluated by FWHM of XRD DCRC and SEM.The relations between HgCdTeFWHM and lattice mismatch,substrates quality,growth conditions as well,were clarified.It was found that lattice mismatch between HgCdTe and ZnCdTe substrate(amct-azct/azct)greatly effects on the performance of epilayers,while it was inappreciable with growth temperature.To obtain good layer with FWHM less than 30arcsec,the optimal lattice mismatch should be in the range of 0-0.05%.The average EPD on 10μm HgCdTe was less than 1×10-5 cm-2,with the best result of 3×104 cm-2.The average FWHM valve across whole wafer was less than 25arcsec.It was also demonstrated by reproducible experiments that theneedle defects and diamond shaped defects were significantly related with substrate chemical polishing treatment.Macro defect density was less than 200cm-2 by improved polishing process.
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