Ⅲ-Ⅴ group semiconductor InAs nanowires are promising candidates for applications in single-electron transistors, resonant tunneling diodes, and ballistic transistors due to their narrow band gap and very high electron mobility.So far, much work has been done to grow InAs nanowires on various substrates.Among them, InAs nanowires grown on Si are of particular significance and have been investigated by many groups since it may enable nanowire electronic devices with seamless integration with the Si platform.However, InAs nanowires usually exhibit random mixtures of wurtzite and zinc-blende crystal structures, which deteriorates their electrical properties and may pose problems in future nanoelectronic devices due to electron scattering at stacking faults or twin planes.