Effects of RF bias power on plasma uniformity in a large-area inductively coupled plasma based on fl

来源 :13th Asia-Pacific Conference on Plasma Science and Technolog | 被引量 : 0次 | 上传用户:wenjun_wu
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  Plasma large-area etching technology requires inductively coupled plasma (ICP) reactors to work with a uniform plasma density.A two-dimensional (2D) self-consistent fluid model has been employed to investigate the influence of the RF bias power on the plasma radial uniformity in a hydrogen discharge with a fixed pressure,i.e.,10 mTorr.The ICP power is fixed at 13.56 MHz and 17 A.
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