【摘 要】
：
研究了不同硒蒸发温度对蒸发法制备Cu2ZnSnSe4(CZTSe)太阳电池的影响,当Se温较低时,低的硒蒸发速率导致初始阶段Zn元素不易与Se反应生成稳定的ZnSe,影响了CZTSe在闪锌矿的ZnS
【机 构】
：
南开大学,光电子薄膜器件与技术研究所,天津,300071
【出 处】
：
第13届全国博士生学术年会——新能源专题
论文部分内容阅读
研究了不同硒蒸发温度对蒸发法制备Cu2ZnSnSe4(CZTSe)太阳电池的影响,当Se温较低时,低的硒蒸发速率导致初始阶段Zn元素不易与Se反应生成稳定的ZnSe,影响了CZTSe在闪锌矿的ZnSe的外延生长,薄膜最终没有择优取向.当Se温较高时,CZTSe薄膜呈(112)择优,但过高的硒蒸发速率较少了初始阶段铜过量的时间,由于铜过量对CZTSe薄膜有一定促进生长的作用,较短的铜过量时间造成CZTSe薄膜结晶质量稍微变差.在较合适的230℃硒蒸发温度条件下制备出效率为2.32％(有效面积0.34cm2)未经过后硒化处理的CZTSe太阳电池.
其他文献
In this paper we measured the re-combination of each domain, concluding emitter region, bulk region and back surface field (BSF) region, of industrial alumi
Despite the optical advantage of near-zero reflection, the silicon nanowire arrays (SiNWs) based solar cells cannot yet achieve satisfactory high efficiency
Perovskite solar cells with mesoporous metal oxide films as scaffold layers have been demonstrated very impressive advances in performance recently.Here, we
The multiple interfaces are necessary for exciton separation in bulk heterojunction (BHJ) solar cells and the continuous pathways for carrier transportation
Complete photo-generated minority carriers quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-t
Earth-abundant Cu2ZnSnS4 (CZTS) thin films were prepared by a two-step process com-posed of spin-coating deposition of sol-gel precursor followed by anneali
采用溶胶-凝胶法在FTO/glass衬底上制备了(BiFeO3)1-x-(BaTiO3)x固溶薄膜.(BiFeO3)1-x-(BaTiO3)x固溶薄膜的退火温度为500℃,组分比例为x=0,0.05,0.10,0.20.x=0,0.05,0.10,0.
Establishing reliable and efficient antireflection structures is of crucial importance for realizing high-performance optoelectronic devices such as solar c
采用化学氧化界面聚合法,以三氯化铁(FeCl3·6H2O)为氧化剂,在二元非离子型表面活性剂介入下,于0℃制备特殊形貌的聚吡咯薄膜.研究了Span80/OP10复配体系对聚吡咯界面聚合成
一种新奇的两步法本征(i)层生长工艺被应用来改善非晶硅/晶体硅(a-Si∶H/c-Si)界面钝化.研究了不同H2稀释流量比率R(R=[H2/SiH4])下的非晶硅薄膜的体材料的光电特性和其应用