The resistive switching memory (RRAM) is one of the most promising candidate for future high-density non-volatile storage [1].Due to the simple 2-terminal structure and fast switching, RRAM may also offer a unique opportunity for novel DRAM and computing application sectors, thus providing a disrupting platform alternative to CMOS technology.To support material engineering and device scaling, however, the switching phenomena and their variability at the nanoscale must be carefully understood and modeled.